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NXP Semiconductors
PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
7. Application information
The PESD36VS2UT is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD36VS2UT provides a surge capability of 160 W per line for an 8/20 μ s
waveform.
line 1 to be protected
line 2 to be protected
PESD36VS2UT
GND
unidirectional protection
of two lines
line 1 to be protected
PESD36VS2UT
GND
bidirectional protection
of one line
006aab617
Fig 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD36VS2UT_1
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 July 2009
7 of 12
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